Method and apparatus for static RAM
US5518939A · kind A · utility
7Cited by
6References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 15, 1995 |
| Grant date | May 21, 1996 |
| Priority date | — |
| Expiry date | Feb 15, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/91
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor in which a device active layer is formed on an insulation film, in which an interface state density present at the interface between the active layer and the insulation film is set to less than 1.times.10.sup.11 /cm.sup.2. The characteristics of TFT can be enhanced by decreasing the leak current and SRAM memory cell can be provided with easy design for the process and the structure while avoiding increase in the resistance and additional capacitance and ensuring voltage withstand.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.