Method of manufacturing thin film transistors in a liquid crystal display
US5518940A · kind A · utility
74Cited by
7References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 5, 1995 |
| Grant date | May 21, 1996 |
| Priority date | — |
| Expiry date | Jan 5, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/948
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a semiconductor device according to the present invention includes a process of introducing impurities into a semiconductor layer with a gate electrode and a resist film as a mask after a resist film is formed on the top and the side of the gate electrode by soaking the gate electrode on a semiconductor layer in an electrolyte containing resist and applying voltage to the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.