Method of coating a piezoelectric substrate with a semiconducting material
US5518952A · kind A · utility
13Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 20, 1994 |
| Grant date | May 21, 1996 |
| Priority date | — |
| Expiry date | Sep 20, 2014 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB41J2002/14225
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
Methods of coating piezoelectric substrates with substantially uniform layers of a semi-conducting material are disclosed including placing the substrate in a heated deposition chamber at reduced pressure and depositing a layer of semiconducting material on the substrate by thermally activated chemical vapor deposition, including admitting a gas bearing the semi-conducting material into the chamber at a pressure of between about 13 and 200 Pa and a temperature of between about 300.degree. and 700.degree.C. so that a layer of semi-conducting material having a desired smoothness is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.