Method and apparatus for stressing, burning in and reducing leakage current of electronic devices using microwave radiation
US5519193A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 1992 |
| Grant date | May 21, 1996 |
| Priority date | — |
| Expiry date | Oct 27, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/071
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of recitfying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.