Controlled impedance lines connected to optoelectronic devices
US5519363A · kind A · utility
9Cited by
21References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 31, 1994 |
| Grant date | May 21, 1996 |
| Priority date | — |
| Expiry date | May 31, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01P3/081
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A dielectric substrate of a material such as silicon is used to provide controlled impedance waveguides for coupling an optoelectronic device to an electronic device. The impedance is controlled by varying the thickness of the dielectric between the signal lines and the ground plane. In the preferred embodiment, the crystallographic structure of the silicon is employed to achieve great precision of the dielectric thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.