Method of fabricating semiconductor devices
US5521126A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 1994 |
| Grant date | May 28, 1996 |
| Priority date | — |
| Expiry date | Jun 22, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/118
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device includes the steps of forming a wiring layer on the surface of a semiconductor substrate, depositing a silicone film on the whole surface of the semiconductor substrate including the wiring layer by a CVD method and exposing the silicone film to oxidative plasma with enhanced frequencies including components of 1 MHz or less to change to a silicon oxide film, the depositing step and exposing step being alternately repeated in the same apparatus till the silicon oxide film having any desired thickness is obtained. The resulting silicon oxide film has the smooth surface and the high density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.