Method for producing microdot-emitting cathodes on silicon for compact flat screens and resulting products
US5521461A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 1, 1995 |
| Grant date | May 28, 1996 |
| Priority date | — |
| Expiry date | Feb 1, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/319
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for producing microdot emitting cathodes on silicon for compact flat screens, and the products obtained by means of said method, are disclosed. According to the method, the emitting cathodes are made from a basic monolithic silicon substrate (1) consisting of a thick wafer (at least 300 microns) or a thin film a few microns thick on an insulating substrate (alumina or glass), the silicon film being "active" in both cases. The method is useful in the field of flat display screens based on the physical phenomenon of cathodoluminescence and field effect electron emission, and in all industrial sectors using compact display screens, e.g. video camera viewfinders, calculators, monitoring devices of all kinds, vehicles, watches and clocks, etc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.