Semiconductor memory device having thin film transistor and method of producing the same
US5521859A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 1995 |
| Grant date | May 28, 1996 |
| Priority date | — |
| Expiry date | Jan 17, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B10/125
Abstract
A thin film transistor (TFT) load type static random access memory (SRAM) which includes a memory capacitor in addition to the stray capacitance. The SRAM includes a semiconductor substrate and a memory cell provided on the semiconductor substrate. The memory cell includes first and second transfer transistors, first and second driver transistors, first and second thin film transistor loads and first and second memory capacitors. The first and second memory capacitors include a storage electrode, a dielectric layer which covers the storage electrode, and an opposing electrode formed on the dielectric layer. A connection region is provided in which the storage electrode of the first memory capacitor, the drain region of the second thin film transistor load and the gate electrode of the first driver transistor are connected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.