Target component for cathode sputtering
US5522976A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 1994 |
| Grant date | Jun 4, 1996 |
| Priority date | — |
| Expiry date | Jun 14, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49982
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The target element (2) is formed from an inorganic compound layer (16) with a melting point above 300.degree. C. deposited on a foam or metallic felt support layer such that the layer of inorganic compound sinks to part of its depth into the support layer to define a composite layer (17). In order to form the target element, a precursor system of the inorganic compound is applied to the support layer, the assembly so formed is subjected to a pressure of between 0.1 MPa and 15 MPa, the resulting assembly is maintained at between 300.degree. C. and 1600.degree. C. and below the melting temperature of the support in order to obtain a sintered assembly. Said assembly is than cooled to an ambient temperature avoiding any sudden cooling. In order to produce the target, the element (2) is glued to a metallic substrate (4) using a conductive adhesive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.