Method for producing a semiconductor laser
US5523256A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 1994 |
| Grant date | Jun 4, 1996 |
| Priority date | — |
| Expiry date | Jul 21, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32325
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser according to the present invention includes: a semiconductor substrate; a multilayer structure provided on the semiconductor substrate, the multilayer structure including an active layer, a pair of cladding layers interposing the active layer, and current confining portion for injecting a current into a stripe-shaped predetermined region of the active layer, wherein the current confining portion includes a first current confining layer formed in regions excluding a region corresponding to the predetermined region of the active layer, the first current confining layer having an energy band gap larger than an energy band gap of the active layer and having a refractive index smaller than a refractive index of the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.