Process of emitting highly spin-polarized electron beam and semiconductor device therefor
US5523572A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 1995 |
| Grant date | Jun 4, 1996 |
| Priority date | — |
| Expiry date | Mar 27, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2203/0296
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided o…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.