High voltage MIS field effect transistor
US5523599A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 1994 |
| Grant date | Jun 4, 1996 |
| Priority date | — |
| Expiry date | Feb 14, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/257
Abstract
A high voltage MIS field effect transistor includes a semiconductor substrate of a first conductivity type; a semiconductor layer of a second conductivity type formed on an obverse surface side of the semiconductor substrate; a base layer of the first conductivity type formed in the semiconductor layer; a source layer of the second conductivity type formed in the base layer; a source electrode abutting the source layer; a gate electrode formed in such a manner as to extend from the source layer to the semiconductor layer via an insulating gate film; a drain section including a drain layer of the second conductivity type formed in the semiconductor layer in such a manner as to be spaced apart from the source layer; and a low-concentration region of the first conductivity type being formed in a vicinity of a periphery of a base corner portion of said base layer. Another low-concentration region of the second conductivity type is further formed in a vicinity of a periphery of a drain corner portion of the base layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.