Photodiode array and method for manufacturing the same
US5523610A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 1994 |
| Grant date | Jun 4, 1996 |
| Priority date | — |
| Expiry date | Jul 7, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/928
Abstract
A photodiode array is provided which includes a cell comprised of at least a substrate, an insulating film formed on the substrate, a semiconductor layer containing an impurity of first conductivity type and provided on the insulating film, an impurity-diffusion layer of second conductivity type formed in the semiconductor layer and reaching the insulating film, and at least one impurity-diffusion layer of the first conductivity type formed within the impurity-diffusion layer of the second conductivity type and reaching the insulating film, wherein pn junctions are defined between the layers of opposite conductivity types and arranged laterally, and of the pn junctions, any pn junction of a predetermined order are connected to each other in series. By virtue of this arrangement, the area of pn junctions per unit area of a substrate is increased thereby contributing to a reduction in chip size and in production cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.