Semiconductor device and fabrication process therefor
US5523626A · kind A · utility
36Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 7, 1994 |
| Grant date | Jun 4, 1996 |
| Priority date | — |
| Expiry date | Sep 7, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An upper wiring layer formed with a bonding pad portion has a stacked structure of a first titanium nitride film, a titanium film, a second titanium nitride film and an aluminum alloy film on the upper surface of an interlayer insulation layer. Also, the upper wiring has a stacked structure of titanium silicide film, the titanium film, the titanium nitride film and the aluminum alloy film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.