Monolithically integrated MOS output-stage component with overload-protection means
US5523714A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 1994 |
| Grant date | Jun 4, 1996 |
| Priority date | — |
| Expiry date | Jun 24, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/0822
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A monolithically integrated MOS output-stage component is proposed which is provided with an output-stage element (10) having a GATE connection, a SOURCE connection, and a DRAIN connection, and having an overload-protection device. An integrated GATE series resistor (11) is provided which connects an outer GATE connection (Ga) of the output-stage component with the GATE connection (Gi) of the output-stage element (10). The overload-protection device is integrated in the output-stage component and has a level matching stage (30) which, by a defined flow through the GATE series resistor (11), effects a displacement of the transmission characteristic of the output-stage element (10) by a defined voltage offset value. Furthermore, a limiting stage (34) is provided which limits the sum value of the DRAIN-SOURCE voltage and a voltage proportional to the DRAIN current to a determinable value. In this way, an overload-protection device in monolithically integrated form is obtained at favorable cost with improved protective function, in which connection the physical limits of the semiconductor can be more strongly utilized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.