Thin film deposition apparatus
US5525158A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1993 |
| Grant date | Jun 11, 1996 |
| Priority date | — |
| Expiry date | Sep 29, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3405
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thin film deposition apparatus for use in a semiconductor manufacturing process or the like, is provided to, in particular, deposit a diffusion barrier thin film onto a substrate having a concave portion with a relatively high aspect ratio (hereinafter referred to as a contact hole). In the thin film deposition apparatus, a small surface and point source or a ring-shaped source is employed, evaporation is performed under such a condition that the Knudsen number K.sub.n =.lambda./H (a ratio of a mean free path .lambda. of an evaporation material particle to a distance (H) between the evaporation source and the substrate) becomes 0.1 or more, and a relation of the substrate and the evaporation source is set according to the aspect ratio of the contact hole, resulting in deposition of the thin film with good coverage on a bottom surface of the contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.