Process for forming thin films by plasma CVD for use in the production of semiconductor devices
US5525550A · kind A · utility
95Cited by
9References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 19, 1993 |
| Grant date | Jun 11, 1996 |
| Priority date | — |
| Expiry date | Nov 19, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/935
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon oxide film is formed by a CVD process, with the use of a silane group gas and water as a main feed gas. Further, a film including silanol is formed by the plasma CVD process with a specific plasma energy, using the silane group gas and water as the main feed gas. The specific plasma energy is selected at 40 (W.multidot..degree.C./cm.sup.2) or below. By annealing this film including silanol, or by performing the oxygen plasma process or the ammonia plasma process, the oxide film or the nitride film is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.