Semiconductor device with thin film resistor having reduced film thickness sensitivity during trimming process
US5525831A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 5, 1994 |
| Grant date | Jun 11, 1996 |
| Priority date | — |
| Expiry date | Apr 5, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C17/24
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin film resistor on a semiconductor device may be laser trimmed while reducing the influence of film thickness of a passivation film formed on the thin film resistor. An underlying oxide film consisting of a BPSG film and a silicon oxide film is formed on an Si substrate. A silicon oxide film and a silicon nitride film are formed on the underlying film as a passivation film, and a silicon oxide film is formed on this assembly. The silicon oxide film contributes to controlling a variation of the laser energy absorption rate of a thin film resistor due to an uneven thickness of the silicon nitride film. Thus, it is possible to stabilize adjustment of the resistance value of the thin film resistor with a laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.