Apparatus for forming diffusion junctions in solar cell substrates
US5527389A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 1995 |
| Grant date | Jun 18, 1996 |
| Priority date | — |
| Expiry date | May 26, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Apparatus for forming shallow p-n junctions in silicon substrates to produce photovoltaic cells, which apparatus provides three processing chambers. An ultrasonic spray is mounted in the first processing chamber to coat a front surface of the substrate with a liquid dopant-containing material. The second processing chamber dries the coated substrates leaving a dopant-containing residue on the front surface. The third processing chamber fires the substrates in an oxygen-containing environment to diffuse the dopant into the substrate and provide a p-n junction. The apparatus conducts humidified air to each chamber to control polymerization of the dopant source and to prevent non-humidified air from entering the chambers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.