Apparatus for plasma enhanced processing of substrates
US5527394A · kind A · utility
16Cited by
8References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 13, 1994 |
| Grant date | Jun 18, 1996 |
| Priority date | — |
| Expiry date | May 13, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3266
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed is an apparatus for plasma-enhanced processing of substrates, hng a recipient in which ions and reactive neutral particles (radicals) formed in plasma act on the substrate. The present invention is distinguished by having means for varying the plasma volume are provided in order to control the absolute values of the ionic current densities and the radical current densities and in order to control the relative ratio of the ionic current densities and the radical current densities on the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.