Photo-assisted CVD apparatus
US5527417A · kind A · utility
771Cited by
8References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 1995 |
| Grant date | Jun 18, 1996 |
| Priority date | — |
| Expiry date | May 22, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/488
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A photo-assisted CVD apparatus including a reaction chamber for storing a substrate, an inlet port for feeding a source gas into the reaction chamber, a light source for radiating light on the source gas fed into the reaction chamber to decompose the source gas upon radiating the light, thereby depositing a film on the substrate, an inlet port for supplying an etching gas into the reaction chamber, and a discharge electrode, arranged above the substrate and having a configuration, surrounding a space above the substrate, for exciting the etching gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.