Process of depositing a layer of silicon oxide bonded to a substrate of polymeric material using high pressure and electrical discharge
US5527629A · kind A · utility
19Cited by
5References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 24, 1994 |
| Grant date | Jun 18, 1996 |
| Priority date | — |
| Expiry date | May 24, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08J2377/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention concerns a process for depositing a thin layer of silicon oxide bonded to a substrate of a polymeric material comprising, concomitantly or consecutively (1) subjecting a surface of the substrate to an electrical discharge with dielectric barrier and (2) exposing said surface of the substrate to an atmosphere containing a silane, thus forming a deposit of silicon oxide bonded to said surface of the substrate Application to the production of sheets or films useful for example as food wrapping.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.