Impurity doping method with adsorbed diffusion source
US5527733A · kind A · utility
106Cited by
13References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 18, 1994 |
| Grant date | Jun 18, 1996 |
| Priority date | — |
| Expiry date | Feb 18, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
For effecting impurity doping, a chemically active semiconductor surface is covered with an adsorption layer composed of an impurity element which forms a dopant in the semiconductor or composed of a compound containing the impurity element. Thereafter, solid phase diffusion is effected using the adsorption layer as an impurity diffusion source so as to form an impurity-doped region having a desired density profile in the depth direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.