Bipolar transistor having a collector well with a particular concentration
US5528066A · kind A · utility
3Cited by
7References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 11, 1994 |
| Grant date | Jun 18, 1996 |
| Priority date | — |
| Expiry date | Oct 11, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
Abstract
A bipolar transistor module which can be implemented into existing CMOS processes without the use of buried layers of epitaxy is described. The transistor makes use of a synthesis of new ideas to achieve high performance. Extended polysilicon electrodes (2,4,6) are utilised to reduce device dimensions and a compatible well is described which maintains a p-channel MOS transistor electrical characteristics whilst lowering the collector series resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.