Field emitter with focusing ridges situated to sides of gate
US5528103A · kind A · utility
83Cited by
15References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 31, 1994 |
| Grant date | Jun 18, 1996 |
| Priority date | — |
| Expiry date | Jan 31, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J31/127
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A gated field-emission structure contains a emitter electrode (46), an overlying electrically insulating layer (48, and one or more electron-emissive elements (52) situated in one or more apertures extending through the insulating layer. A patterned gate electrode (50) through which each electron-emissive element is exposed overlies the insulating layer. Focusing ridges (54) are situated on the insulating layer on opposite sides of the gate electrode. The focusing ridges, which normally extend to a considerably greater height than the gate electrode, cause emitted electrons to converge into a narrow band.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.