Method of forming a low distortion stencil mask
US5529862A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 1, 1993 |
| Grant date | Jun 25, 1996 |
| Priority date | — |
| Expiry date | Sep 1, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/20
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A stencil mask (10) has a membrane (14) under tensile stress and at least one pattern opening (22) formed through the membrane (14). A plurality of stress relief openings (30) are formed in the membrane for reducing stress-induced distortion of the membrane and the mask pattern. The stress relief openings (30) are positioned to relieve concentrations of stress within the membrane (14) such as those resulting from non-regularities within the pattern. In one embodiment, a screening material (56), less rigid than the membrane (14), is contained within the stress relief openings (30). Methods of forming such masks (10) are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.