Process of making thin film 2H .alpha.-sic by laser ablation
US5529949A · kind A · utility
3Cited by
1References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 17, 1994 |
| Grant date | Jun 25, 1996 |
| Priority date | — |
| Expiry date | Mar 17, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Thin films of 2H .alpha.-silicon carbide are produced by pulsed laser ablation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.