Method of fabricating lateral resonant tunneling structure
US5529952A · kind A · utility
9Cited by
5References
5Claims
0Family size
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Key dates
| Filing date | Sep 20, 1994 |
| Grant date | Jun 25, 1996 |
| Priority date | — |
| Expiry date | Sep 20, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/979
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A resonant tunneling diode (400) with lateral carrier transport through tunneling barriers (404, 408) grown as a refilling of trenches etched into a transverse quantum well (410) and defining a quantum wire or quantum dot (406). The fabrication method uses angled deposition to create overhangs at the top of openings which define sublithographic separations for tunneling barrier locations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.