Semiconductor device having a multilayer interconnection structure
US5530282A · kind A · utility
41Cited by
4References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 10, 1995 |
| Grant date | Jun 25, 1996 |
| Priority date | — |
| Expiry date | Aug 10, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a increased freedom of design in the connection between an electrode and one or more inner leads. In a semiconductor device 2, a semiconductor element 4 is fixed onto a die pad 2 which is a part of a lead frame. On the surface of the semiconductor element 4 is formed an electrode (bonding pad) 5, which is electrically connected to an inner lead 3 through a bridge structure 10 comprising an insulating film 11 deposited at a lowermost position and a conductive thin film pattern 12 formed thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.