Sputtering target, film resistor and thermal printer head
US5530467A · kind A · utility
10Cited by
1References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 19, 1991 |
| Grant date | Jun 25, 1996 |
| Priority date | — |
| Expiry date | Jun 19, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C17/12
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A sputtering target comprises an oxide containing niobium, a silicide containing niobium and silicon oxide substantially for the rest. The sputtering target is formed e.g. by reactive sintering a powdery niobium or a powdery niobium alloy containing silicon oxide in the range of 15 to 70 mol % by mole ratio. A film resistor formed by using the sputtering target exhibits high specific resistance, good stabilities of resistance and a film composition and excellent reproducibility and is used as a heat generating resistor in e.g. a thermal printer head.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.