Method of making a semiconductor thin-film
US5531182A · kind A · utility
102Cited by
7References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 12, 1994 |
| Grant date | Jul 2, 1996 |
| Priority date | — |
| Expiry date | May 12, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/003
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Polycrystalline silicon thin-films having a large grain size are formed by preparing a substrate of amorphous surface comprising first regions containing tin atoms at a higher content and second regions containing tin atoms at a lower content or not substantially containing them, and then heat-treating the substrate to grow crystal grains from crystal nuclei formed only in the first regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.