Method for producing synthetic diamond thin film, the thin film and device using it
US5531184A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 1993 |
| Grant date | Jul 2, 1996 |
| Priority date | — |
| Expiry date | Dec 13, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/277
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a method for producing a synthetic diamond thin film which comprises decomposing with microwave a raw material gas containing at least one compound selected from the group consisting of carbon monoxide, carbon dioxide and a hydrocarbon and hydrogen or hydrogen and oxygen to produce a plasma and contacting the plasma with the surface of a substrate held outside the area irradiated with the microwave to form a diamond thin film on the substrate. The present invention further provides an apparatus for producing a synthetic diamond thin film and a synthetic diamond thin film and devices in which the synthetic diamond thin film is used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.