Low emissivity film
US5532062A · kind A · utility
46Cited by
8References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 14, 1994 |
| Grant date | Jul 2, 1996 |
| Priority date | — |
| Expiry date | Sep 14, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24942
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A low emissivity film comprises a coating of an oxide film, a metal film, an oxide film and so on alternately formed on a substrate in this order in a total of (2n+1) layers where n is an integer being equal to or more than 1, wherein an oxide film (B) formed on the side opposite to a metal film (A) being most remote from the substrate in view from the substrate, contains at least one layer of a zinc oxide film doped with at least one selected from the group consisted of Si, Ti, Cr, B, Mg, Sn and Ga by 1 through 10 atomic % with respect to a total amount including Zn.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.