Impurity doping method with adsorbed diffusion source
US5532185A · kind A · utility
3Cited by
48References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 1992 |
| Grant date | Jul 2, 1996 |
| Priority date | — |
| Expiry date | Mar 27, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The surface of a silicon wafer is cleaned to expose chemically active surface. Diborane gas is fed to the exposed active surface for adsorbing boron to the active surface. The adsorbed boron on the silicon wafer works as an impurity diffusion source. Boron is diffused from the impurity diffusion source into the silicon wafer to make an impurity diffusion layer by heat treatment. The amount of diborane gas fed to the active surface is set in an amount at which the sheet resistance of the impurity diffusion layer does not depend on variations in feed amount.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.