Process for the production of dielectric thin films
US5532504A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 1994 |
| Grant date | Jul 2, 1996 |
| Priority date | — |
| Expiry date | Dec 5, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J5/34
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a process for producing a dielectric thin film of a compound oxide of a high-melting metal and a low-melting metal by vapor-depositing the compound oxide onto a substrate, wherein the improvement comprises irradiating a laser beam onto the substrate or to the vapor phase during vapor deposition. There is also provided a pyroelectric type of sensor comprising: a MOS element including a drain electrode, a source electrode, a gate electrode and an Si semiconductor and a film of a ferroelectric or pyroelectric material formed on the drain electrode, the drain electrode being made of a material which exhibits a good ohmic contact with Si or SiO.sub.2 and has a lattice constant close to that of ferroelectric or pyroelectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.