Supersaturated rare earth doped semiconductor layers formed by chemical vapor deposition
US5534079A · kind A · utility
10Cited by
5References
25Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 9, 1994 |
| Grant date | Jul 9, 1996 |
| Priority date | — |
| Expiry date | Mar 9, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/918
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A CVD process for producing a rare earth-doped, epitaxial semiconductor layer on a substrate is disclosed. The process utilizes a silane or germane and a rare earth compound in the gas phase. By this method single phase, rare earth-doped semiconductor layers, supersaturated in the rare earth, are produced. The preferred rare earth is erbium and the preferred precursors for depositing erbium by CVD are erbium hexafluoroacetylacetonate, acetylacetonate, tetramethylheptanedionate and flurooctanedionate. The process may be used to produce optoelectronic devices comprising a silicon substrate and an erbium-doped epitaxial silicon film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.