Method for etching HgCdTe substrate
US5534109A · kind A · utility
10Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 11, 1994 |
| Grant date | Jul 9, 1996 |
| Priority date | — |
| Expiry date | Oct 11, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/465
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching an HgCdTe substrate selectively by dry etching. A substrate is selectively etched without damaging the substrate during a simple process in which the higher selectivity of an HgCdTe substrate versus a resist mask is obtainable. Removal of the resist mask after etching is easy. The etching gas contains molecules having a bond of nitrogen and hydrogen and is formed into plasma. An HgCdTe substrate is etched with a resist film as a mask by the plasma gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.