Method for directly depositing metal containing patterned films
US5534312A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 1994 |
| Grant date | Jul 9, 1996 |
| Priority date | — |
| Expiry date | Nov 14, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/105
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A photoresist-free method for making patterned films of metal oxides, metals, or other metal containing compounds is described. The method involves applying an amorphous film of a metal complex to a substrate. The film may be conveniently applied by spin coating using standard industry techniques. The metal complex used is photoreactive and undergoes a low temperature chemical reaction in the presence of light of a suitable wavelength. The end product of the reactions depends upon the atmosphere in which the reactions take place. Metal oxide films may be made in air. Patterned films may be made by exposing only selected portions of the film to light. Patterns of two or more materials may be laid down from the same film by exposing different parts of the film to light in different atmospheres. The resulting patterned film is generally planar. Separate planarization steps are not generally required.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.