Method of fabricating a polysilicon thin film transistor
US5534445A · kind A · utility
36Cited by
12References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 23, 1995 |
| Grant date | Jul 9, 1996 |
| Priority date | — |
| Expiry date | May 23, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for producing a polysilicon thin film transistor includes hydrogenating the thin film transistor and depositing an atomic hydrogen-containing layer on the thin film transistor. The thin film transistor is characterized by leakage current rates as low as 10.sup.-13 A.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.