Field emission display devices, and field emission electron beam source and isolation structure components therefor
US5534743A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 1994 |
| Grant date | Jul 9, 1996 |
| Priority date | — |
| Expiry date | Sep 7, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N13/365
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A field emitter structure, comprising: a base substrate; a field emitter element on the base substrate; a multilayer differentially etched dielectric stack circumscribingly surrounding the field emitter element on the base substrate; and a gate electrode overlying the multilayer differentially etched dielectric stack, and in circumscribing spaced relationship to the field emitter element. Also disclosed are electron source devices, comprising an electron emitter element including a material selected from the group consisting of leaky dielectric materials, and leaky insulator materials, as well as electron source devices, comprising an electron emitter element including an insulator material doped with a tunneling electron emission enhancingly effective amount of a dopant species, and thin film triode devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.