Sense amplifier, SRAM, and microprocessor
US5534800A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 1993 |
| Grant date | Jul 9, 1996 |
| Priority date | — |
| Expiry date | Oct 7, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/419
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A sense amplifier for an SRAM providing both a small power consumption and a high speed sensing operation. The sense amplifier includes a first p-channel MOSFET having a source terminal connected to a bit line, a second p-channel MOSFET having a source terminal connected to another bit line, a first n-channel MOSFET having a drain terminal connected to a drain terminal of the first p-channel MOSFET and a gate terminal connected to a drain terminal of the second p-channel MOSFET and to a gate terminal of the first p-channel MOSFET, a second n-channel MOSFET having a drain terminal connected to a drain terminal of the second p-channel MOSFET, a gate terminal connected to a drain terminal of the first p-channel MOSFET and to a gate terminal of the second p-channel MOSFET, and a source terminal connected to a source terminal of the first n-channel MOSFET, a third p-channel MOSFET for controlling the connection/disconnection between a first power source (Vcc) and the drain terminal of the first p-channel MOSFET, a fourth p-channel MOSFET for controlling the connection/disconnection between the first power source Vcc and the drain terminal of the second p-channel MOSFET, and a third n-ch…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.