Process for preparing semiconductor substrate by bonding to a metallic surface
US5536361A · kind A · utility
87Cited by
8References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 23, 1995 |
| Grant date | Jul 16, 1996 |
| Priority date | — |
| Expiry date | Jan 23, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/96
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for preparing a semiconductor substrate comprises a step of making a silicon substrate porous, a step of forming a non-porous silicon monocrystalline layer on the resulting porous substrate, a step of bonding the surface of the non-porous silicon monocrystalline layer to another substrate having a metallic surface, and a step of removing the porous silicon layer of the bonded substrates by selective etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.