Single source volatile precursor for SiO.sub.2.TiO.sub.2 powders and films
US5536857A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 1994 |
| Grant date | Jul 16, 1996 |
| Priority date | — |
| Expiry date | Jul 5, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/152
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Novel single-source volatile precursor compounds are disclosed, having the general formula EQU (RO).sub.3 Si--O--Ti (OR).sub.3 where each of the six R moieties in the C.sub.3 to C.sub.6 alkyl, preferably all being tert-butyl. The precursor compounds are suitable for use in dissociation methods, such as sol-gel and chemical vapor deposition, for preparing powders and films of stoichiometric SiO.sub.2.TiO.sub.2. Optical films to provide an anti-reflective surface on a lens, window or the like and powders for catalytic substrates, etc. are prepared using the SiO.sub.2.TiO.sub.2 yielded by the single-source volatile precursor compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.