Retrograde NWell cathode Schottky transistor and fabrication process
US5536966A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 1994 |
| Grant date | Jul 16, 1996 |
| Priority date | — |
| Expiry date | Aug 15, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/617
Abstract
An improved Schottky transistor structure (6), including a bipolar transistor structure (7) and a Schottky diode structure (8), is formed by retrograde diffusing relatively fast diffusing atoms to form a localized retrograde diode well (9) as the substrate for the Schottky diode structure. An expanded buried collector layer (11) formed of relatively slow diffusing atoms underlies the base and collector regions of the bipolar transistor structure (7) and the retrograde diode well (9). A diode junction (10) is formed by expanding the base contact of the bipolar transistor structure to include the surface of the retrograde diode well. Preferably, the diode junction is a Platinum-Silicide junction. The improved Schottky transistor structure may be formed as part of a bipolar junction transistor fabrication process or a BICMOS integrated circuit fabrication process wherein the buried diode layer may be formed at the same time as the buried collector layer of the bipolar transistor structure and the retrograde diode well may be formed at the same time as the sub-emitter collector region of the bipolar transistor structure. The buried collector layer definition mask is also a buried diode…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.