Method for growing transparent conductive GaInO.sub.3 films by pulsed laser deposition
US5538767A · kind A · utility
7Cited by
6References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 24, 1995 |
| Grant date | Jul 23, 1996 |
| Priority date | — |
| Expiry date | Jan 24, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Applicants have discovered that films of conductively doped GaInO.sub.3 grown on substrates by pulsed laser deposition have conductivity comparable to conventional wide band-gap transparent conductors while exhibiting superior light transmission, particularly in the green and blue wavelength regions of the visible spectrum. Substrate temperatures ranged from room temperature to 350.degree. C. in an ambient containing oxygen at partial pressure in the range 0.1 mTorr to 100 mTorr. The preferred laser source was an excimer laser operating in the deep ultraviolet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.