Method for forming a transparent conductive ITO film
US5538905A · kind A · utility
19Cited by
13References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 20, 1993 |
| Grant date | Jul 23, 1996 |
| Priority date | — |
| Expiry date | Oct 20, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a transparent conductive film includes the steps of: forming an ITO film on a substrate by sputtering a target including oxygen atoms, indium atoms, and tin atoms under an inert gas atmosphere; patterning the ITO film by selectively removing a prescribed portion of the ITO film using an etching method; and doping the patterned ITO film with oxygen using an ion shower doping method, thereby forming the transparent conductive film from the ITO film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.