Process for producing mask ROM
US5538906A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 30, 1995 |
| Grant date | Jul 23, 1996 |
| Priority date | — |
| Expiry date | Jan 30, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/133
Abstract
A process for producing a semiconductor device, comprising the steps of: (i) forming a transistor having a gate electrode, channel region and source/drain regions on a semiconductor substrate, followed by forming an interlayer insulation film on the entire semiconductor substrate including the transistor; (ii) forming a contact hole extending to either of the gate electrode and each of source/drain regions in the interlayer insulation film on the gate electrode or source/drain regions of the transistor; (iii) forming a resist mask having an opening above the channel region of the transistor on the interlayer insulation film, and implanting ions into the channel region by using the resist mask to write data; (iv) annealing the entire semiconductor substrate at a temperature of about 700.degree. C. to about 800.degree. C. in an atmosphere of an inert gas; and (v) forming a wiring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.