Method of fabricating a buried-ridge II-VI laser diode
US5538918A · kind A · utility
21Cited by
28References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1994 |
| Grant date | Jul 23, 1996 |
| Priority date | — |
| Expiry date | Dec 23, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8162
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A buried-ridge or buried-heterostructure II-VI laser diode. Polycrystalline II-VI semiconductor such as ZnS, ZnSSe, ZnSe or CdS deposited by vacuum evaporation buries the etched ridge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.