Method of fabricating a semiconductor device with high heat conductivity
US5538919A · kind A · utility
6Cited by
9References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 18, 1995 |
| Grant date | Jul 23, 1996 |
| Priority date | — |
| Expiry date | May 18, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A VCSEL having a first mirror stack positioned on the surface of a substrate, an active region positioned on the first mirror stack and substantially coextensive therewith, and a second mirror stack positioned on the active region, the second mirror stack forming a ridge or mesa having a side surface. A metal contact layer is positioned on the side surface of the ridge or mesa and on portions of an end of the ridge or mesa to define a light emitting area, and a layer of diamond-like material is electrolytically plated on the metal contact layer so as to form a heat conductor to remove heat from the laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.