Semiconductor substrate having a gettering layer
US5539245A · kind A · utility
82Cited by
5References
2Claims
0Family size
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Inventors
Key dates
| Filing date | May 25, 1994 |
| Grant date | Jul 23, 1996 |
| Priority date | — |
| Expiry date | May 25, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/913
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon wafer having a low concentration of carbon and a silicon wafer having a high concentration of carbon are joined and polished to prescribed thicknesses to form a semiconductor substrate according to the present invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.